1 Features
• Low On-Resistantance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Operating Junction and Storage Temperature:
– –65°C to +150°C
• 2kV Gate-Source ESD Rating

2 Applications
• Personal Electronics
• Building Automation
• Industrial Automation

3 Description
This device is a N-channel Field-Effect Transistor in a
plastic package. It has been designed to minimize the
on-state resistance while maintaining fast switching
performance.