Features
Max rDS(on) = 72mΩ at VGS = –4.5V, ID = –3.7A
Max rDS(on) = 95mΩ at VGS = –2.5V, ID = –3.2A
Max rDS(on) = 130mΩ at VGS = –1.8V, ID = –2.0A
Max rDS(on) = 195mΩ at VGS = –1.5V, ID = –1.0A
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
HBM ESD protection level > 2kV typical (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony oxides

General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.