1 Features
• Radiation Performance
– Total Ionizing Dose (TID) characterized up to 100krad(Si)
– TID RLAT/RHA up to 100krad(Si)
– Single-Event Latch-up (SEL) Immune to LET up to 75MeV-cm2/mg at 125℃
– Single-event transient (SET) characterized LET up to 75MeV-cm2/mg
• SMD# 5962R2620601PXE
• QML Class P
– Meets NASA ASTM E595 Outgassing Spec
– Military Temp Range (-55℃ to 125℃)
• 1-channel diode input
• Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 95% to 164%
• High collector-emitter voltage: VCE (max) = 30V
• Robust SiO2 isolation barrier
– Isolation rating: 3750VRMS
– Working voltage: 500VRMS, 707VPK
– Surge capability: up to 10kV
• Response time: 3μs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
• Small 4-pin package (DFG)

2 Applications
• Satellite electrical power systems (EPS)
• Communications Payload
• Radar Imaging Payload

3 Description
The ISOS510-SP radiation-hardened device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.
ISOS510-SP is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510-SP enables these devices to be used in aerospace and defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.