General description
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56
package, using advanced TrenchMOS Superjunction technology with optimization to provide
improved EMC performance (up to 6 dB). This product has been designed and qualified for high
performance power switching applications.
Features and benefits
• Optimized for improved EMC Performance
• 180 A continuous ID(max) rating
• Avalanche rated, 100% tested at IAS = 160 A
• Strong SOA (linear-mode) rating
• NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery'
• Low Qrr, QG and QGD for high system efficiency and low EMI designs
• Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to
175 °C
• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
joints providing excellent board level reliability
• Low parasitic inductance and resistance
Applications
• Automation, control and instrumentation
• Autonomous systems, Robotics and Cobots
• DC-to-DC converters
• Brushless DC motor control
• Brushed motors
• Battery isolation
• Industrial load-switch and eFuse
• Inrush management, hotswap