DESCRIPTION
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.014 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE A 100 oC
■ APPLICATION ORIENTED
    CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT
    SALES OFFICE
   
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
    SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
    ■ DC-DC & DC-AC CONVERTERS IN HIGH
    PERFORMANCE VRMs
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
    ABS, AIR-BAG, LAMPDRIVERS, Etc.)