RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — -47 dBc in 30 kHz BW 1.25 MHz — -55 dBc in 12.5 kHz BW 2.25 MHz — -55 dBc in 1 MHz BW Output Power — 4.5 Watts Avg. Power Gain — 13.5 dB Efficiency — 17% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
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