| 制造商 | 部件名 | 数据表 | 功能描述 |
 Renesas Technology Corp |
RJK0383DPA
|
114Kb / 5P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
RJK0389DPA
|
113Kb / 5P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
HAT2285WP
|
130Kb / 10P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
HAT2210R
|
116Kb / 12P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
RJK0389DPA
|
358Kb / 11P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
HAT2285WP
|
115Kb / 10P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
RJK0214DPA
|
260Kb / 11P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
RJK0215DPA
|
271Kb / 11P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
RJK0230DPA
|
221Kb / 11P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
|
RJK0223DNS
|
81Kb / 5P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|