BB305MEW-TL-E 数据表(PDF)

数据搜索系统，热门电子元器件搜索

BB305MEW-TL-E 数据表 (PDF) - Renesas Technology Corp

BB305MEW-TL-E Datasheet PDF - Renesas Technology Corp


部件名	BB305MEW-TL-E

下载	BB305MEW-TL-E 下载

文件大小	212.42 Kbytes

页	10 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305MEW-TL-E Datasheet (PDF)

下载数据表


部件名	BB305MEW-TL-E

下载	BB305MEW-TL-E Click to download

文件大小	212.42 Kbytes

页	10 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305MEW-TL-E 数据表 (HTML) - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 1Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 2Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 3Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 4Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 5Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 6Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 7Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 8Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 9Page - Renesas Technology Corp

BB305MEW-TL-E Datasheet HTML 10Page - Renesas Technology Corp

BB305MEW-TL-E 产品详情

Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Superior cross modulation characteristics.
• High gain; (PG = 28 dB typ. at f = 200 MHz)
• Wide supply voltage range; Applicable with 5V to 9V supply voltage.
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)

类似零件编号 - BB305MEW-TL-E

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	BB305M	69Kb / 12P	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

More results

类似说明 - BB305MEW-TL-E

制造商	部件名	数据表	功能描述
Renesas Technology Corp	BB504C	215Kb / 10P	Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
	TBB1002	105Kb / 10P	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
	TBB1004	105Kb / 10P	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
	TBB1005	105Kb / 10P	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
	TBB1017	238Kb / 14P	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
	BB504M	133Kb / 10P	Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
	TBB1002	125Kb / 9P	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
	TBB1004	125Kb / 9P	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
	TBB1005	125Kb / 9P	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
	TBB1012	225Kb / 15P	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

More results

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

链接网址

ALLDATASHEET是否为您带来帮助? [ DONATE ]
关于 Alldatasheet \| 广告服务 \| 联系我们 \| 隐私政策 \| 数据表链接 \| 链接交换 \| 制造商名单 All Rights Reserved©Alldatasheet.com
Mirror Sites English : Alldatasheet.com \| English : Alldatasheet.net \| Chinese : Alldatasheetcn.com \| German : Alldatasheetde.com \| Japanese : Alldatasheet.jp Russian : Alldatasheetru.com \| Korean : Alldatasheet.co.kr \| Spanish : Alldatasheet.es \| French : Alldatasheet.fr \| Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com \| Polish : Alldatasheet.pl \| Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in \| Mexican : Alldatasheet.com.mx \| British : Alldatasheet.co.uk \| New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com \| icmetro.com

ALLDATASHEET是否为您带来帮助? [ DONATE ]

Family Site : ic2ic.com | icmetro.com