VDS (V) 250
RDS(on) (Ω) VGS = 10 V 1.1
Qg (Max.) (nC) 14
Qgs (nC) 2.7
Qgd (nC) 7.8
Configuration Single

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serveres as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free