General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features
■ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A:
    ◆ Peak envelope power load power = 300 W
    ◆ Power gain = 21 dB
    ◆ Drain efficiency = 46 %
    ◆ Third order intermodulation distortion = −35 dBc
■ DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A:
    ◆ Average output power = 75 W
    ◆ Power gain = 21 dB
    ◆ Drain efficiency = 32 %
    ◆ Third order intermodulation distortion = −32 dBc (4.3 MHz from center frequency)
■ Integrated ESD protection
■ Advanced flange material for optimum thermal behavior and reliability
■ Excellent ruggedness
■ High power gain
■ High efficiency
■ Designed for broadband operation (470 MHz to 860 MHz)
■ Excellent reliability
■ Internal input and output matching for high gain and optimum broadband operation
■ Easy power control
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications
■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band