| 制造商 | 部件名 | 数据表 | 功能描述 |
 NTE Electronics |
NTE21256
|
42Kb / 6P |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
 Texas Instruments |
SMJ4256
|
947Kb / 19P |
262,144-BIT DYNAMIC RANDOM-ACCESS MEMORY
|
|
TMS465169P
|
463Kb / 30P |
DYNAMIC RANDOM-ACCESS MEMORIES
|
 Hitachi Semiconductor |
HM514260C
|
260Kb / 27P |
262,144-word x 16-bit Dynamic Random Access Memory
|
 Texas Instruments |
TMS416400A
|
397Kb / 27P |
4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
|
 fujitsu semiconductor |
MB81464-12
|
1Mb / 22P |
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY
|
 Texas Instruments |
SMJ416160
|
364Kb / 24P |
1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORIES
|
 ACCUTEK MICROCIRCUIT CO... |
AK48256S
|
113Kb / 2P |
262,144 X 8 Bit MOS Dynamic Random Access Memory
|
|
AK58256AG
|
90Kb / 2P |
262,144 x 8 bit CMOS Dynamic Random Access Memory
|
 Texas Instruments |
TMS416100
|
368Kb / 25P |
16777216-BIT DYNAMIC RANDOM-ACCESS MEMORIES
|