DESCRIPTION
M/A-COM’s MA4AGSW8-2 is an Aluminum-GalliumArsenide (AlGaAs) anode enhanced, SP8T, PIN diode series switch. Operation is accomplished with 10 mA applied to the low loss port and 0V for the isolated ports. M/A-COM’s Technology Solutions AlGaAs process utilizes a patented hetero-junction technology which produces lower insertion loss than conventional GaAs devices. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes used have low series resistance, (3 Ω) , low capacitance (20 fF) , and fast switching speed (20 nS). The MA4AGSW8-2 device is fully passivated with silicon nitride, and has an extra layer of polyamide for added scratch and impact protection. This protective coating prevents damage to the diode junction and anode air bridges during handling and assembly. External RF to DC bias networks which are optimized for the particular operating band of interest are required.

FEATURES
• Specified Performance : 50 MHz to 40 GHz
• Operational Performance: 50 MHz to 50 GHz
• 2.0 dB Typical Insertion Loss at 40 GHz
• 30 dB Typical Isolation at 40 GHz thru 3 Diodes
• 22 dB Typical Isolation at 40 GHz thru 2 Diodes
• Low Current Consumption
   • 10 mA for low loss state
   • 0 Volts for Isolation state
• M/A-COM’s Patented AlGaAs Hetero-Junction
   Anode Technology.
• Silicon Nitride Passivation
• BCB Impact Protection
• RoHS Compliant