Description
The IRF830 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
   
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in
    Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
   
Application
■ High current, high speed switching
■ Lighting
■ Ideal for off-line power supply, adaptor, PFC