HiPerRF™ Power MOSFETs   
F-Class: MegaHertz Switching
   
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
   
Features
● RF capable Mosfets
● Rugged polysilicon gate cell structure
● Double metal process for low gate
    resistance
● Unclamped Inductive Switching (UIS)
    rated
● Low package inductance
    - easy to drive and to protect
● Fast intrinsic rectifier
   
Applications
● DC-DC converters
● Switched-mode and resonant-mode
    power supplies, >500kHz switching
● DC choppers
● Pulse generation
● Laser drivers
   
Advantages
● PLUS 247TMpackage for clip or spring
    mounting
● Space savings
● High power density