Description
The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of less than 4ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating range. Designed with small internal delays, the IXZ4DF18N50 is suitable for higher power operation where combiners are used. Its features and wide safety margin in operating voltage and power make the IXZ4DF18N50 unmatched in performance and value.

Features
• Isolated substrate
    − high isolation voltage (>2500V)
    − excellent thermal transfer
    − Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low Rds(ON)
• Very low insertion inductance(<2nH)
• No beryllium oxide (BeO) or other hazardous materials
• Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes
• Latch-up protected
• Low quiescent supply current

Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
• Single package reduces size and heat sink area

Applications
• Class D or E Switching Amplifier
• Multi MHz Switch Mode Power Supplies (SMPS)