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VG3617801CT 数据表 (PDF) - Vanguard International Semiconductor

VG3617801CT Datasheet PDF - Vanguard International Semiconductor
部件名 VG3617801CT
下载  VG3617801CT 下载
文件大小   1008.75 Kbytes
  68 Pages
制造商  VML [Vanguard International Semiconductor]
网页  http://www.vis.com.tw
标志 VML - Vanguard International Semiconductor
功能描述 16Mb CMOS Synchronous Dynamic RAM

VG3617801CT Datasheet (PDF)

Go To PDF Page 下载 数据表
VG3617801CT Datasheet PDF - Vanguard International Semiconductor

部件名 VG3617801CT
下载  VG3617801CT Click to download

文件大小   1008.75 Kbytes
  68 Pages
制造商  VML [Vanguard International Semiconductor]
网页  http://www.vis.com.tw
标志 VML - Vanguard International Semiconductor
功能描述 16Mb CMOS Synchronous Dynamic RAM

VG3617801CT 数据表 (HTML) - Vanguard International Semiconductor


VG3617801CT 产品详情

Description
The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.

Features
• Single 3.3V(±0.3V) power supply
• Clock Frequency:100MHz
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Dual Internal banks controlled by A11(Bank select)
• Simultaneous and independent two bank operation
• I/O level : LVTTL interface
• Random column access in every cycle
• X8 organization
• Input/output control by DQM
• 2048 refresh cycles/32ms
• Burst termination by burst stop and precharge command
• Burst read single write option




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