DESCRIPTION

Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high quality intrinsic ‘I’ layer that provides low loss, high isolation and ultra high speed switching characteristics.

KEY FEATURES

Wide Bandwidth / High Switching Speed

5 Gram Typical Pull Strength

Very Low RS/CJ (Loss/Isolation) Products with Low Inductance

High Quality, High Resistivity Epitaxy

Stable Low Leakage Passivation with Rugged Glass Body

RoHS Compliant 1

APPLICATIONS/BENEFITS

High Speed Switching

Broadband Performance

Suitable for Applications through 26 Ghz