| 制造商 | 部件名 | 数据表 | 功能描述 |
 Intersil Corporation |
ISL6580
|
1Mb / 31P |
Integrated Power Stage
September 2003 |
 Mitsubishi Electric Sem... |
MGF0840G
|
119Kb / 4P |
High-power GaN HEMT (small signal gain stage)
|
|
MGF0843G
|
130Kb / 4P |
High-power GaN HEMT (small signal gain stage)
|
|
MGF0846G
|
119Kb / 4P |
High-power GaN HEMT (small signal gain stage)
|
 Vishay Siliconix |
SIC778A
|
719Kb / 13P |
High Performance DrMOS ??Integrated Power Stage
21-May-12 |
 Texas Instruments |
LMG5200
|
299Kb / 23P |
GaN Half-Bridge Power Stage
|
|
LMG3410R050
|
910Kb / 27P |
600-V 50-m(ohm) Integrated GaN Power Stage With Overcurrent Protection
|
 Vishay Siliconix |
SIC778A
|
728Kb / 13P |
High Performance DrMOS – Integrated Power Stage
21-May-12 |
 Rohm |
BM3G007MUV-LB
|
1Mb / 29P |
650 V GaN HEMT Power Stage
13.Jan.2023 Rev.001 |
|
BM3G015MUV-LB
|
1Mb / 29P |
650 V GaN HEMT Power Stage
13.Jan.2023 Rev.001 |