Product Description
The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is packaged in an ultra-small (9mmx11mm) LCC, minimizing the required board space.

Features
• Single 2.8V to 5.0V Supply Voltage
• +35.0dBm GSM Output Power at 3.2V
• +32.5dBm DCS Output Power at 3.2V
• 55% GSM and 50% DCS Efficiency
• Internal Band Select

Typical Applications
• 3V Dual-Band GSM/DCS Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• GPRS Compatible
• GSM, E-GSM and DCS Products