| 制造商 | 部件名 | 数据表 | 功能描述 |
 Samsung semiconductor |
K4R271669A
|
3Mb / 64P |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
|
K4R271669B
|
306Kb / 20P |
256K x 16/18 bit x 32s banks Direct RDRAMTM
|
|
K4R881869M
|
3Mb / 64P |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
|
KM416RD8AC
|
3Mb / 64P |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
 Winbond |
W981616AH
|
1Mb / 40P |
512K x 2 BANKS x 16 BIT SDRAM
|
 A-Data Technology |
ADS4616A4A
|
530Kb / 8P |
Synchronous DRAM(512K X 16 Bit X 2 Banks)
Rev 1 December, 2001 |
 Samsung semiconductor |
K4R761869A-F
|
313Kb / 20P |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
 Integrated Circuit Solu... |
IC42S16101
|
759Kb / 78P |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
|
IC42S16102
|
764Kb / 78P |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
 AMIC Technology |
A43L0616B
|
585Kb / 48P |
512K X 16 Bit X 2 Banks Synchronous DRAM
|