IPI023NE7N3G 数据表(PDF) - Infineon Technologies AG

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IPI023NE7N3G 数据表 (PDF) - Infineon Technologies AG

IPI023NE7N3G Datasheet PDF - Infineon Technologies AG


部件名	IPI023NE7N3G

下载	IPI023NE7N3G 下载

文件大小	466.24 Kbytes

页	10 Pages

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

功能描述	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPI023NE7N3G Datasheet (PDF)

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IPI023NE7N3G Datasheet PDF - Infineon Technologies AG


部件名	IPI023NE7N3G

下载	IPI023NE7N3G Click to download

文件大小	466.24 Kbytes

页	10 Pages

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

功能描述	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPI023NE7N3G 数据表 (HTML) - Infineon Technologies AG

IPI023NE7N3G Datasheet HTML 1Page - Infineon Technologies AG

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IPI023NE7N3G Datasheet HTML 8Page - Infineon Technologies AG

IPI023NE7N3G Datasheet HTML 9Page - Infineon Technologies AG

IPI023NE7N3G Datasheet HTML 10Page - Infineon Technologies AG

类似零件编号 - IPI023NE7N3G

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPI020N06N	1,021Kb / 2P	New OptiMOS??40V and 60V 07 / 2012
	IPI020N06N	624Kb / 9P	OptiMOSTM Power-Transistor Rev.2.2 2012-12-20
	IPI024N06N3	483Kb / 11P	OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. Rev. 2.2 2009-12-11
	IPI024N06N3-G	483Kb / 11P	OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. Rev. 2.2 2009-12-11
	IPI024N06N3G	483Kb / 11P	OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. Rev. 2.2 2009-12-11

类似说明 - IPI023NE7N3G

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPP16CN10N	624Kb / 12P	OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM) Rev. 1.01 2006-06-02
	IPB200N15N3	556Kb / 12P	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.05 2010-04-28
	IPP086N10N3G	480Kb / 12P	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.5 2010-07-16
	IPP028N08N3G	463Kb / 10P	OptiMOS짰3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 1.0 2008-01-25
	IPB107N20N3G	452Kb / 11P	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.2 2009-10-21
	IPB108N15N3G	438Kb / 11P	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.1 2009-12-01
	IPB600N25N3G	426Kb / 11P	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.2 2009-10-23
	IPB072N15N3G	424Kb / 11P	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.06 2010-04-19
	IPB08CN10NG	413Kb / 11P	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 1.08 2010-04-26
Shanghai Leiditech Elec...	LMP0218G	1Mb / 6P	Excellent gate charge x RDS(on) product(FOM)

关于 Infineon Technologies AG

Infineon Technologies是一家领先的全球半导体制造商，专门为汽车，工业和通信系统等各种行业提供电力管理，安全和控制解决方案。
该公司成立于1999年，总部位于德国Neubiberg。
Infineon提供各种产品，包括微控制器，功率半导体，传感器和其他集成电路。
该公司在全球市场拥有强大的业务，在世界各地拥有运营和设施。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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