Features
• Built-in IGBT and diode bridge of partial switching PFC
   circuit Enable to reduce mounting area
• Low saturation voltage IGBT VCE(sat) = 1.7V max
• Low saturation voltage diode bridge VF = 1.1V max
• The clip lead is adopted for inner lead.
   Low inductance, low resistance, high current capability
   The smoke generation and explosion are less likely
   to occur in case of destruction.

Applications
• Partial switching PFC