■ Description
The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

■ Features
● RDS(ON) = 1.20Ω@VGS = 10 V
● Low gate charge ( typical 29nC)
● High ruggedness
● Fast switching capability
● Avalanche energy specified
● Improved dv/dt capability