Features
NPN Transistor
   • BVCEO > 15V
   • IC = 4.5A Continuous Collector Current
   • Low Saturation Voltage (100mV max @ 1A)
   • RSAT = 45mΩ for a low equivalent On-Resistance
PNP Transistor
   • BVCEO > -12V
   • IC = -4A Continuous Collector Current
   • Low Saturation Voltage (-140mV max @ -1A)
   • RSAT = 60mΩ for a low equivalent On-Resistance
• hFE characterized up to 12A for high current gain hold up
• Low profile 0.8mm high package for thin applications
• RθJA efficient, 40% lower than SOT26
• 6mm2 footprint, 50% smaller than TSOP6 and SOT26
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)

Applications
• DC – DC Converters
• Charging circuits
• Power switches
• Motor control
• LED Backlighting circuits
• Portable applications