General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

correction , electronic lamp ballasts based on half bridge topology and switching mode power supplies.

FEATURES

VDSS= 60V, ID= 50A

Drain-Source ON Resistance :

RDS(ON)=0.022 @VGS= 10V

Qg(typ.) = 32nC

Improved dv/dt capacity, high Ruggedness

Maximum Junction Temperature Range (175°C)