GA200SA60S 数据表(PDF) - Vishay Siliconix

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GA200SA60S 数据表 (PDF) - Vishay Siliconix

GA200SA60S Datasheet PDF - Vishay Siliconix


部件名	GA200SA60S

下载	GA200SA60S 下载

文件大小	182.52 Kbytes

页	9 Pages

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

功能描述	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

GA200SA60S Datasheet (PDF)

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GA200SA60S Datasheet PDF - Vishay Siliconix


部件名	GA200SA60S

下载	GA200SA60S Click to download

文件大小	182.52 Kbytes

页	9 Pages

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

功能描述	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

GA200SA60S 数据表 (HTML) - Vishay Siliconix

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GA200SA60S 产品详情

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10
(on), 342 A

FEATURES

• Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz

• Lowest conduction losses available

• Fully isolated package (2500 VAC)

• Very low internal inductance (5 nH typical)

• Industry standard outline

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Designed for increased operating efficiency in power conversion: UPS, SMPS, TIG welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

类似零件编号 - GA200SA60S

制造商	部件名	数据表	功能描述
International Rectifier	GA200SA60S	201Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR
	GA200SA60S	322Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR
	GA200SA60SP	322Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR
Vishay Siliconix	GA200SA60SP	181Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 22-Jul-10
Vishay Siliconix	GA200SA60SP	181Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 22-Jul-10

类似说明 - GA200SA60S

制造商	部件名	数据表	功能描述
International Rectifier	IRG4BC30K	137Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4BC30U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40W	116Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
	IRGBF20F	255Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A)
	IRG4BH20K-LPBF	298Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A )
Vishay Siliconix	VS-GA250SA60S	288Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 20-May-16
	GA200SA60SP	181Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 22-Jul-10
	VS-GT250SA60S	196Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 20-Jul-2021
	VS-GT250SA60S	196Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 20-Jul-2021

关于 Vishay Siliconix

Vishay Siliconix是Vishay Intertechnology的子公司，Vishay Intertechnology是被动电子组件的全球制造商。
Vishay Siliconix专门研究Power MOSFET，IGBT和其他功率半导体的设计，制造和营销。
该公司成立于1962年，总部位于加利福尼亚州圣克拉拉。
Vishay Siliconix为各种应用提供了电力解决方案，包括可再生能源系统，工业设备，计算和电信以及汽车电子产品。
该公司的产品专为高效，低功耗和高可靠性而设计，并使用先进的制造工艺在最先进的设施中生产。
侧重于创新和客户满意度，Vishay Siliconix致力于为客户提供满足其需求的最佳电力管理解决方案。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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