GeneralDescription

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology lineaelectroniclampballast.

Features

■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V

■ Ultra-lowGatecharge(Typical18nC)

■ FastSwitchingCapability

■ 100%AvalancheTested

■ MaximumJunctionTemperatureRange(150℃)