NX6342EP 数据表(PDF) - Renesas Technology Corp

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NX6342EP 数据表 (PDF) - Renesas Technology Corp

NX6342EP Datasheet PDF - Renesas Technology Corp


部件名	NX6342EP

下载	NX6342EP 下载

文件大小	202.04 Kbytes

页	7 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

NX6342EP Datasheet (PDF)

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NX6342EP Datasheet PDF - Renesas Technology Corp


部件名	NX6342EP

下载	NX6342EP Click to download

文件大小	202.04 Kbytes

页	7 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

NX6342EP 数据表 (HTML) - Renesas Technology Corp

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NX6342EP Datasheet HTML 7Page - Renesas Technology Corp

NX6342EP 产品详情

DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

FEATURES
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 8 mA
• Differential efficiency ηd = 0.23 W/A
• Wide operating temperature range TC = −5 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.0 mm

APPLICATIONS
• 10 Gb/s BASE-LR/LW (IEEE802.3ae)

类似零件编号 - NX6342EP

制造商	部件名	数据表	功能描述
California Eastern Labs	NX6342EP	899Kb / 6P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
California Eastern Labs	NX6342EP-AZ	899Kb / 6P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
Renesas Technology Corp	NX6342EP	194Kb / 7P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

类似说明 - NX6342EP

制造商	部件名	数据表	功能描述
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8369TB	213Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8349TB	211Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8369TB	214Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX6342EP	899Kb / 6P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
Renesas Technology Corp	NX8349YK	253Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX6342EP	194Kb / 7P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
	NX8346TS	164Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8349TB	204Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8349TS	705Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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