NX6411GH 数据表(PDF) - Renesas Technology Corp

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NX6411GH 数据表 (PDF) - Renesas Technology Corp

NX6411GH Datasheet PDF - Renesas Technology Corp


部件名	NX6411GH

下载	NX6411GH 下载

文件大小	177.82 Kbytes

页	8 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION

NX6411GH Datasheet (PDF)

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NX6411GH Datasheet PDF - Renesas Technology Corp


部件名	NX6411GH

下载	NX6411GH Click to download

文件大小	177.82 Kbytes

页	8 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION

NX6411GH 数据表 (HTML) - Renesas Technology Corp

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NX6411GH 产品详情

DESCRIPTION
The NX6411GH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

FEATURES
• Optical output power Po = 14.0 mW
• Low threshold current lth = 10 mA
• Differential efficiency ηd = 0.3 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 10 mm

APPLICATION
• 2.5 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)

类似零件编号 - NX6411GH

制造商	部件名	数据表	功能描述
California Eastern Labs	NX6411GH	190Kb / 7P	1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
California Eastern Labs	NX6411GH-AZ	190Kb / 7P	1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Renesas Technology Corp	NX6411GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION

类似说明 - NX6411GH

制造商	部件名	数据表	功能描述
Renesas Technology Corp	NX6410GH	178Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6411GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6410GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	PL10692EJ03V0DS	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Labs	NX6414EH	173Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Labs	NX5315EH	283Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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