NESG220034 数据表(PDF) - Renesas Technology Corp

数据搜索系统，热门电子元器件搜索

ALLDATASHEETCN.COM

X

NESG220034 数据表 (PDF) - Renesas Technology Corp

NESG220034 Datasheet PDF - Renesas Technology Corp


部件名	NESG220034

下载	NESG220034 下载

文件大小	226.87 Kbytes

页	11 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NESG220034 Datasheet (PDF)

Go To PDF Page

下载数据表

NESG220034 Datasheet PDF - Renesas Technology Corp


部件名	NESG220034

下载	NESG220034 Click to download

文件大小	226.87 Kbytes

页	11 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NESG220034 数据表 (HTML) - Renesas Technology Corp

NESG220034 Datasheet HTML 1Page - Renesas Technology Corp

NESG220034 Datasheet HTML 2Page - Renesas Technology Corp

NESG220034 Datasheet HTML 3Page - Renesas Technology Corp

NESG220034 Datasheet HTML 4Page - Renesas Technology Corp

NESG220034 Datasheet HTML 5Page - Renesas Technology Corp

NESG220034 Datasheet HTML 6Page - Renesas Technology Corp

NESG220034 Datasheet HTML 7Page - Renesas Technology Corp

NESG220034 Datasheet HTML 8Page - Renesas Technology Corp

NESG220034 Datasheet HTML 9Page - Renesas Technology Corp

NESG220034 Datasheet HTML 10Page - Renesas Technology Corp

NESG220034 产品详情

NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN POWER MINIMOLD (34 PKG)

FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz
• PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• OIP3 = 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• Maximum stable power gain: MSG =12.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : fT = 11.5 GHz
• This product is improvement of ESD of NESG2xxx series.
• 3-pin power minimold (34 PKG)

类似零件编号 - NESG220034

制造商	部件名	数据表	功能描述
NEC	NESG220034	97Kb / 9P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
NEC	NESG220034-A	97Kb / 9P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
Renesas Technology Corp	NESG220034-A	137Kb / 2P	RF & Microwave device
NEC	NESG220034-T1	97Kb / 9P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
NEC	NESG220034-T1-A	97Kb / 9P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

类似说明 - NESG220034

制造商	部件名	数据表	功能描述
California Eastern Labs	NESG270034	349Kb / 11P	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
NEC	NESG210833	103Kb / 8P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
	NESG220033	95Kb / 8P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
	NESG220034	97Kb / 9P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
	NESG240033	103Kb / 8P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
	NESG240034	91Kb / 9P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
Renesas Technology Corp	NESG210833	232Kb / 10P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
	NESG220033	224Kb / 10P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
	NESG240033	232Kb / 10P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
	NESG240034	221Kb / 11P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

链接网址

ALLDATASHEET是否为您带来帮助? [ DONATE ]

关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单
All Rights Reserved©Alldatasheet.com

Mirror Sites English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz

Family Site : ic2ic.com | icmetro.com