NX7563JB-BC 数据表(PDF) - Renesas Technology Corp

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NX7563JB-BC 数据表 (PDF) - Renesas Technology Corp

NX7563JB-BC Datasheet PDF - Renesas Technology Corp


部件名	NX7563JB-BC

下载	NX7563JB-BC 下载

文件大小	160.24 Kbytes

页	8 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

NX7563JB-BC Datasheet (PDF)

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NX7563JB-BC Datasheet PDF - Renesas Technology Corp


部件名	NX7563JB-BC

下载	NX7563JB-BC Click to download

文件大小	160.24 Kbytes

页	8 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

NX7563JB-BC 数据表 (HTML) - Renesas Technology Corp

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NX7563JB-BC 产品详情

DESCRIPTION
The NX7563JB-BC is a 1 550 nm Multiple Quantum Well (MQW) structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment (OTDR).

FEATURES
• High output power Pf = 135 mW MIN. @ IFP = 1 000 mA, PW = 10 μs, Duty = 1%
• Long wavelength λC = 1 550 nm
• Internal thermoelectric cooler, thermistor
• Hermetically sealed 14-pin Dual-In-Line Package
• Single mode fiber pigtail

类似零件编号 - NX7563JB-BC

制造商	部件名	数据表	功能描述
California Eastern Labs	NX7563JB-BC	978Kb / 6P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
California Eastern Labs	NX7563JB-BC-AZ	978Kb / 6P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
Renesas Technology Corp	NX7563JB-BC	152Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

类似说明 - NX7563JB-BC

制造商	部件名	数据表	功能描述
NEC	NDL7515P	61Kb / 8P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
NEC	NDL7565P	59Kb / 8P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
California Eastern Labs	NX7363JB-BC	968Kb / 6P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
	NX7563JB-BC	978Kb / 6P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
	NX7663JB-BC	957Kb / 6P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
Renesas Technology Corp	NX7363JB-BC	158Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
	NX7663JB-BC	159Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
	NX7363JB-BC	151Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
	NX7563JB-BC	152Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
	NX7663JB-BC	151Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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