2N4174 数据表(PDF)

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2N4174 数据表 (PDF) - New Jersey Semi-Conductor Products, Inc.

2N4174 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.


部件名	2N4174

下载	2N4174 下载

文件大小	131.02 Kbytes

页	1 Pages

制造商	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

网页	http://www.njsemi.com

标志

功能描述	SCR, V(DRM) == 600V TO 699.9V

2N4174 Datasheet (PDF)

下载数据表


部件名	2N4174

下载	2N4174 Click to download

文件大小	131.02 Kbytes

页	1 Pages

制造商	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

网页	http://www.njsemi.com

标志

功能描述	SCR, V(DRM) == 600V TO 699.9V

2N4174 数据表 (HTML) - New Jersey Semi-Conductor Products, Inc.

2N4174 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc.

2N4174 产品详情

Silicon Controlled Rectifiers Reverse Blocking Trlode Thyristors

and military applications. Offered In a choice of space-saving, economical packages for mounting versatility.

• Uniform Low-Level Noise-Immune Gate Triggering — IGT = 10 mA (Typ) @ TC = 25°C
• Low Forward "On" Voltage — VT - 1 V (Typ) @ 5 Amp @ 25°C
• High Surge-Current Capability — ITSM = 100 Amp Peak
• Shorted Emitter Construction

类似零件编号 - 2N4174

制造商	部件名	数据表	功能描述
Central Semiconductor C...	2N4174	57Kb / 1P	SCRs
Motorola, Inc	2N4174	185Kb / 4P	SILICON CONTROLLED RECTIFIERS
Digitron Semiconductors	2N4174	1Mb / 4P	SILICON CONTROLLED RECTIFIERS
New Jersey Semi-Conduct...	2N4174	77Kb / 2P	Silicon Controlled Rectifiers

More results

类似说明 - 2N4174

制造商	部件名	数据表	功能描述
New Jersey Semi-Conduct...	2N4101	95Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N4102	115Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N4166	108Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N4190	114Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N4444	116Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N5171	109Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N5443	115Kb / 1P	TRIAC, V(DRM) = 600V TO 699.9V
	2N5446	135Kb / 1P	TRIAC, V(DRM) = 600V TO 699.9V
	2N5809	76Kb / 1P	TRIAC, V(DRM) = 600V TO 699.9V
	2N6174	96Kb / 1P	SCR, V(DRM) = 600V TO 699.9V

More results

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