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SST28SF040A 数据表 (PDF) - Silicon Storage Technology, Inc

SST28SF040A Datasheet PDF - Silicon Storage Technology, Inc
部件名 SST28SF040A
下载  SST28SF040A 下载
文件大小   323.43 Kbytes
  24 Pages
制造商  SST [Silicon Storage Technology, Inc]
网页  http://www.sst.com/
标志 SST - Silicon Storage Technology, Inc
功能描述 4 Mbit (512K x8) SuperFlash EEPROM

SST28SF040A Datasheet (PDF)

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SST28SF040A Datasheet PDF - Silicon Storage Technology, Inc

部件名 SST28SF040A
下载  SST28SF040A Click to download

文件大小   323.43 Kbytes
  24 Pages
制造商  SST [Silicon Storage Technology, Inc]
网页  http://www.sst.com/
标志 SST - Silicon Storage Technology, Inc
功能描述 4 Mbit (512K x8) SuperFlash EEPROM

SST28SF040A 数据表 (HTML) - Silicon Storage Technology, Inc


SST28SF040A 产品详情

PRODUCT DESCRIPTION
The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.
Featuring high performance programming, the SST28SF/VF040A typically Byte-Program in 35 µs. The SST28SF/VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.

FEATURES:
• Single Voltage Read and Write Operations
   – 5.0V-only for SST28SF040A
   – 2.7-3.6V for SST28VF040A
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Memory Organization: 512K x8
• Sector-Erase Capability: 256 Bytes per Sector
• Low Power Consumption
   – Active Current: 15 mA (typical) for 5.0V and
      10 mA (typical) for 2.7-3.6V
   – Standby Current: 5 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
   – Byte-Program Time: 35 µs (typical)
   – Sector-Erase Time: 2 ms (typical)
   – Complete Memory Rewrite: 20 sec (typical)
• Fast Read Access Time
   – 5.0V-only operation: 90 and 120 ns
   – 2.7-3.6V operation: 150 and 200 ns
• Latched Address and Data
• Hardware and Software Data Protection
   – 7-Read-Cycle-Sequence Software Data
      Protection
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm and 8mm x 20mm)
   – 32-pin PDIP




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关于 Silicon Storage Technology, Inc


Silicon Storage Technology,Inc。(SST)是一家美国技术公司,专门从事非挥发性内存解决方案的设计和制造,包括闪存和微控制器。
该公司成立于1991年,总部位于加利福尼亚州的桑尼维尔。
SST以其创新技术和高质量产品而闻名,并且在记忆和存储行业中享有很高的声誉。
2010年,SST由微控制器和模拟半导体的领先提供商Microchip Technology Inc.收购。
如今,SST是Microchip的子公司,并继续为各种应用提供非易失性存储解决方案。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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