PRODUCT DESCRIPTION
The SST31LF041/041A/043/043A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. The SST31LF041/041A/043/043A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A/043/043A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs.

FEATURES:
• Monolithic Flash + SRAM ComboMemory
    – SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM
    – SST31LF043/043A: 512K x8 Flash + 32K x8 SRAM
• Single 3.0-3.6V Read and Write Operations
• Concurrent Operation
    – Read from or write to SRAM while Erase/Program Flash
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read
    – Standby Current: 10 µA (typical)
• Flash Sector-Erase Capability
    – Uniform 4 KByte sectors
• Latched Address and Data for Flash
• Fast Read Access Times:
    – SST31LF041/043 Flash: 70 ns SRAM: 70 ns
    – SST31LF041A/043A Flash: 300 ns SRAM: 300 ns
• Flash Fast Erase and Byte-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Bank-Erase Time: 70 ms (typical)
    – Byte-Program Time: 14 µs (typical)
    – Bank Rewrite Time: 8 seconds (typical)
• Flash Automatic Erase and Program Timing
    – Internal VPP Generation
• Flash End-of-Write Detection
    – Toggle Bit
    – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
    – 32-lead TSOP (8 x 14 mm) SST31LF041A/043A
    – 40-lead TSOP (10 x 14 mm) SST31LF041/043