PRODUCT DESCRIPTION
The SST39LF/VF080 and SST39LF/VF016 devices are 1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 1M x8 / 2M x8
• Single Voltage Read and Write Operations
    – 3.0-3.6V for SST39LF080/016
    – 2.7-3.6V for SST39VF080/016
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 15 mA (typical)
    – Standby Current: 4 µA (typical)
    – Auto Low Power Mode: 4 µA (typical)
• Sector-Erase Capability
    – Uniform 4 KByte sectors
• Block-Erase Capability
    – Uniform 64 KByte blocks
• Fast Read Access Time:
    – 55 ns for SST39LF080/016
    – 70 and 90 ns for SST39VF080/016
• Latched Address and Data
• Fast Erase and Byte-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Block-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Byte-Program Time: 14 µs (typical)
    – Chip Rewrite Time:
        15 seconds (typical) for SST39LF/VF080
        30 seconds (typical) for SST39LF/VF016
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 40-lead TSOP (10mm x 20mm)
    – 48-ball TFBGA (6mm x 8mm)