General Description
The S25FL129P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device is offered in two configurations: 256 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4 KB sub sectors, or 64 uniform 256 KB sectors. The S25FL129P device is backward compatible with the S25FL128P (uniform 256 KB sector) device.
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be programmed in-system with the standard system 3.0-volt VCC supply.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   – Full voltage range: 2.7 to 3.6V read and write operations
■ Memory architecture
   – Uniform 64 KB sectors
   – Top or bottom parameter block (Two 64-KB sectors broken
      down into sixteen 4-KB sub-sectors each)
   – Uniform 256 KB sectors (no 4-KB sub-sectors)
   – 256-byte page size
   – Backward compatible with the S25FL128P (uniform 256 KB sector)
      device
■ Program
   – Page Program (up to 256 bytes) in 1.5 ms (typical)
   – Program operations are on a page by page basis
   – Accelerated programming mode via 9V W#/ACC pin
   – Quad Page Programming
■ Erase
   – Bulk erase function
   – Sector erase (SE) command (D8h) for 64 KB and 256 KB sectors
   – Sub-sector erase (P4E) command (20h) for 4 KB sectors
      (for uniform 64-KB sector device only)
   – Sub-sector erase (P8E) command (40h) for 8 KB sectors
      (for uniform 64-KB sector device only)
■ Cycling endurance
   – 100,000 cycles per sector typical
■ Data retention
   – 20 years typical
■ Device ID
   – JEDEC standard two-byte electronic signature
   – RES command one-byte electronic signature for backward
      compatibility
■ One time programmable (OTP) area for permanent, secure
   identification; can be programmed and locked at the factory
   or by the customer
■ CFI (Common Flash Interface) compliant: allows host system
   to identify and accommodate multiple flash devices
■ Process technology
   – Manufactured on 0.09 µm MirrorBit® process technology
■ Package option
   – Industry Standard Pinouts
   – 16-pin SO package (300 mils)
   – 8-contact WSON package (6 x 8 mm)
   – 24-ball BGA (6 x 8 mm) package, 5 x 5 pin configuration
   – 24-ball BGA (6 x 8 mm) package, 6 x 4 pin configuration
      Performance Characteristics
■ Speed
   – Normal READ (Serial): 40 MHz clock rate
   – FAST_READ (Serial): 104 MHz clock rate (maximum)
   – DUAL I/O FAST_READ: 80 MHz clock rate or
      20 MB/s effective data rate
   – QUAD I/O FAST_READ: 80 MHz clock rate or
      40 MB/s effective data rate
■ Power saving standby mode
   – Standby Mode 80 µA (typical)
   – Deep Power-Down Mode 3 µA (typical)
      Memory Protection Features
■ Memory protection
   – W#/ACC pin works in conjunction with Status Register Bits to
      protect specified memory areas
   – Status Register Block Protection bits (BP2, BP1, BP0) in status