| 制造商 | 部件名 | 数据表 | 功能描述 |
Stanson Technology |
ST2315SRG
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218Kb / 6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST2341A
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582Kb / 6P |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST3401SRG
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212Kb / 6P |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
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ST3407SRG
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184Kb / 6P |
ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP4435A
|
311Kb / 6P |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP4803
|
697Kb / 7P |
STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP6621
|
452Kb / 6P |
STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP7401
|
461Kb / 6P |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP9437
|
375Kb / 6P |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Shenzhen Huazhimei Semi... |
HM1P10MR
|
763Kb / 5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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