CAS100H12AM1 数据表(PDF) - Cree, Inc

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CAS100H12AM1 数据表 (PDF) - Cree, Inc

CAS100H12AM1 Datasheet PDF - Cree, Inc


部件名	CAS100H12AM1

下载	CAS100H12AM1 下载

文件大小	740.7 Kbytes

页	7 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	1200V, 100A Silicon Carbide Half-Bridge Module

CAS100H12AM1 Datasheet (PDF)

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CAS100H12AM1 Datasheet PDF - Cree, Inc


部件名	CAS100H12AM1

下载	CAS100H12AM1 Click to download

文件大小	740.7 Kbytes

页	7 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	1200V, 100A Silicon Carbide Half-Bridge Module

CAS100H12AM1 数据表 (HTML) - Cree, Inc

CAS100H12AM1 Datasheet HTML 1Page - Cree, Inc

CAS100H12AM1 Datasheet HTML 2Page - Cree, Inc

CAS100H12AM1 Datasheet HTML 3Page - Cree, Inc

CAS100H12AM1 Datasheet HTML 4Page - Cree, Inc

CAS100H12AM1 Datasheet HTML 5Page - Cree, Inc

CAS100H12AM1 Datasheet HTML 6Page - Cree, Inc

CAS100H12AM1 Datasheet HTML 7Page - Cree, Inc

类似零件编号 - CAS100H12AM1

制造商	部件名	数据表	功能描述
Molex Electronics Ltd.	CAS100H12AM1	859Kb / 11P	1200V, 100A Silicon Carbide Half-Bridge Module

类似说明 - CAS100H12AM1

制造商	部件名	数据表	功能描述
Nihon Inter Electronics...	PBMB100B12	119Kb / 3P	IGBT MODULE H-Bridge 100A 1200V
Molex Electronics Ltd.	CAS100H12AM1	859Kb / 11P	1200V, 100A Silicon Carbide Half-Bridge Module
Anaren Microwave	MSK4804	780Kb / 8P	1200V/100A SiC HALF BRIDGE PEM
Cree, Inc	CAB450M12XM3	893Kb / 9P	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module
General Electric Compan...	GE12047CCA3	491Kb / 9P	1200V half bridge Silicon Carbide Power module Rev. : 1, Public Release May 11, 2021
General Electric Compan...	GE17042CCA3	663Kb / 9P	1700V Half-Bridge Silicon Carbide Power Module Rev 1.1 -Public Release - January 18, 2022
WOLFSPEED, INC.	CAB008A12GM3	2Mb / 12P	1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Rev. 1, April 2023
	CAB011M12FM3	2Mb / 12P	1200 V, 11 mΩ, Silicon Carbide, Half-Bridge Module Rev. 3, May 2023
	CAB320M17XM3	2Mb / 12P	1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module Rev. 2, February 2023
	CAB450M12XM3	892Kb / 9P	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module Rev. A, 2019-06-01

关于 Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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