| 制造商 | 部件名 | 数据表 | 功能描述 |
 Advanced Power Technolo... |
APT1001RBLC
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35Kb / 2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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APT10050JLC
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39Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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APT10086BLC
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35Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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APT5010JLC
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35Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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APT5014B2LC
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35Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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APT5015BLC
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29Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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APT5017BLC
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35Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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APT5020BLC
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35Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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APT50M50JLC
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35Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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APT50M80B2LC
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36Kb / 2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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