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STD4NK60ZT4 数据表 (PDF) - STMicroelectronics
STD4NK60ZT4 Datasheet PDF - STMicroelectronics
部件名 STD4NK60ZT4
下载  STD4NK60ZT4 下载
文件大小   970.81 Kbytes
页   28 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 N-channel 600 V, 1.76 Ω, 4 A SuperMESH™Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

STD4NK60ZT4 Datasheet (PDF)

Go To PDF Page 下载 数据表
STD4NK60ZT4 Datasheet PDF - STMicroelectronics

部件名 STD4NK60ZT4
下载  STD4NK60ZT4 Click to download

文件大小   970.81 Kbytes
页   28 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 N-channel 600 V, 1.76 Ω, 4 A SuperMESH™Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

STD4NK60ZT4 数据表 (HTML) - STMicroelectronics


STD4NK60ZT4 产品详情

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING




类似零件编号 - STD4NK60ZT4

制造商部件名数据表功能描述
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Inchange Semiconductor ...		 STD4NK60ZT4 ISC-STD4NK60ZT4 Datasheet
299Kb / 2P		 isc N-Channel MOSFET Transistor
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VBsemi Electronics Co.,...		 STD4NK60ZT4 VBSEMI-STD4NK60ZT4 Datasheet
1Mb / 9P		 Power MOSFET
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STMicroelectronics		 STD4NK60ZT4 STMICROELECTRONICS-STD4NK60ZT4 Datasheet
731Kb / 32P		 N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages
Rev 9 - April 2018
More results


类似说明 - STD4NK60ZT4

制造商部件名数据表功能描述
logo
STMicroelectronics		 STD11NM60N-1 STMICROELECTRONICS-STD11NM60N-1_08 Datasheet
623Kb / 21P		 N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET
03-Mar-2008
STB4NK60Z STMICROELECTRONICS-STB4NK60Z_08 Datasheet
578Kb / 20P		 N-channel 600 V - 1.76 Ω - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
16-Apr-2008
STX11NM60N STMICROELECTRONICS-STX11NM60N Datasheet
641Kb / 20P		 N-channel 600 V, 0.37 Ω, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
03-Mar-2009
STX6NM60N STMICROELECTRONICS-STX6NM60N Datasheet
698Kb / 19P		 N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
21-Jan-2009
STB5NK50Z-1 STMICROELECTRONICS-STB5NK50Z-1_V01 Datasheet
674Kb / 29P		 N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages
18-Sep-2018
STB4NK60Z-1 STMICROELECTRONICS-STB4NK60Z-1_V01 Datasheet
731Kb / 32P		 N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages
Rev 9 - April 2018
STD5NM60 STMICROELECTRONICS-STD5NM60_V01 Datasheet
558Kb / 18P		 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK
Rev 17 October 2008
STD3NK80Z-1 STMICROELECTRONICS-STD3NK80Z-1_V01 Datasheet
1Mb / 29P		 N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages
06-Apr-2017
STD3NK60ZT4 STMICROELECTRONICS-STD3NK60ZT4 Datasheet
936Kb / 34P		 N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages
20-Aug-2018
STD5NK60ZT4 STMICROELECTRONICS-STD5NK60ZT4 Datasheet
582Kb / 24P		 N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages
22-Aug-2018
More results




关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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