2SC4226 数据表(PDF) - Renesas Technology Corp

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2SC4226 数据表 (PDF) - Renesas Technology Corp

2SC4226 Datasheet PDF - Renesas Technology Corp


部件名	2SC4226

下载	2SC4226 下载

文件大小	149.56 Kbytes

页	8 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

2SC4226 Datasheet (PDF)

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2SC4226 Datasheet PDF - Renesas Technology Corp


部件名	2SC4226

下载	2SC4226 Click to download

文件大小	149.56 Kbytes

页	8 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

2SC4226 数据表 (HTML) - Renesas Technology Corp

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2SC4226 产品详情

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

DESCRIPTION
The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package.

FEATURES
• Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-pin super minimold package

类似零件编号 - 2SC4226

制造商	部件名	数据表	功能描述
NEC	2SC4226	56Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
Guangdong Kexin Industr...	2SC4226	60Kb / 1P	NPN Silicon Epitaxial Transistor
SeCoS Halbleitertechnol...	2SC4226	287Kb / 3P	NPN Silicon Plastic Encapsulated Transistor
SeCoS Halbleitertechnol...	2SC4226	258Kb / 3P	NPN Silicon Epitaxial Planar Transistor
Galaxy Semi-Conductor H...	2SC4226	198Kb / 4P	NPN Silicon Epitaxial Planar Transistor

类似说明 - 2SC4226

制造商	部件名	数据表	功能描述
Renesas Technology Corp	2SC3357	218Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
California Eastern Labs	NE68718	306Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Labs	NE68539	727Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
	2SC4536	181Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC5011	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
	2SC5012	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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