| 制造商 | 部件名 | 数据表 | 功能描述 |
 Seme LAB |
IRF230
|
22Kb / 2P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
|
|
BFC60
|
17Kb / 1P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
|
BFC40
|
12Kb / 1P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
|
BFC11
|
26Kb / 2P |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
 Advanced Power Technolo... |
APT10M07JVFR
|
121Kb / 4P |
High Voltage N-Channel enhancement mode power MOSFET
|
|
APT10M11B2VFR
|
66Kb / 4P |
High Voltage N-Channel enhancement mode power MOSFET
|
|
APT10M11JVFR
|
121Kb / 4P |
High Voltage N-Channel enhancement mode power MOSFET
|
 Seme LAB |
BFC19
|
30Kb / 2P |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
 IXYS Corporation |
IXEL40N400
|
173Kb / 5P |
Very High Voltage IGBT ( Electrically Isolated Tab)
|
|
IXKC25N80C
|
119Kb / 4P |
N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface
|