The RF MOSFET Line
RF Power
​​​​​​​Field-Effect Transistors
N–Channel Enhancement–Mode

Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Guaranteed Performance
   MRF175GV @ 28 V, 225 MHz (“V” Suffix)
      Output Power — 200 Watts
      Power Gain — 14 dB Typ
      Efficiency — 65% Typ
   MRF175GU @ 28 V, 400 MHz (“U” Suffix)
      Output Power — 150 Watts
      Power Gain — 12 dB Typ
      Efficiency — 55% Typ
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
• Low Crss — 20 pF Typ @ VDS = 28