HGTP3N60C3D 数据表(PDF) - Harris Corporation

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HGTP3N60C3D 数据表 (PDF) - Harris Corporation

HGTP3N60C3D Datasheet PDF - Harris Corporation


部件名	HGTP3N60C3D

下载	HGTP3N60C3D 下载

文件大小	327.17 Kbytes

页	7 Pages

制造商	HARRIS [Harris Corporation]

网页	http://www.harris.com

标志

功能描述	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTP3N60C3D Datasheet (PDF)

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HGTP3N60C3D Datasheet PDF - Harris Corporation


部件名	HGTP3N60C3D

下载	HGTP3N60C3D Click to download

文件大小	327.17 Kbytes

页	7 Pages

制造商	HARRIS [Harris Corporation]

网页	http://www.harris.com

标志

功能描述	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTP3N60C3D 数据表 (HTML) - Harris Corporation

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HGTP3N60C3D Datasheet HTML 7Page - Harris Corporation

HGTP3N60C3D 产品详情

Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

Features
• 6A, 600V at TC = +25°C
• 600V Switching SOA Capability
• Typical Fall Time - 130ns at TJ = +150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

类似零件编号 - HGTP3N60C3D

制造商	部件名	数据表	功能描述
Intersil Corporation	HGTP3N60C3D	273Kb / 7P	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2000
Harris Corporation	HGTP3N60C3D	394Kb / 11P	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Harris Corporation	HGTP3N60C3D	394Kb / 11P	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

类似说明 - HGTP3N60C3D

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	HGTP7N60C3D	197Kb / 7P	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Intersil Corporation	HGTG30N60C3D	116Kb / 7P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2000
	HGTP12N60C3D	99Kb / 7P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2000
	HGTP3N60C3D	273Kb / 7P	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2000
	HGTP7N60C3D	176Kb / 7P	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2000
Fairchild Semiconductor	HGTG30N60C3D	144Kb / 8P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Fairchild Semiconductor	HGT1Y40N60B3D	132Kb / 9P	70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Harris Corporation	HGTP3N60C3D	394Kb / 11P	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor	HGT1S7N60C3DS9A	566Kb / 9P	14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Fairchild Semiconductor	HGTG30N60C3D	299Kb / 9P	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2009

关于 Harris Corporation

Harris Corporation was a Florida-based technology company that specialized in communications and information technology. The company was founded in 1895 and went through several iterations over the years, including mergers and acquisitions.

In 2019, Harris Corporation merged with L3 Technologies to form L3Harris Technologies, which is now one of the largest defense companies in the world. The company provides a wide range of products and services in the areas of aerospace, defense, communications, and intelligence.

Some of Harris Corporation's previous areas of focus included tactical radios, satellite communications systems, air traffic control systems, and cybersecurity solutions. The company's customers included the U.S. military, government agencies, and commercial organizations around the world.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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