RJK03P7DPA 数据表(PDF) - Renesas Technology Corp

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RJK03P7DPA 数据表 (PDF) - Renesas Technology Corp

RJK03P7DPA Datasheet PDF - Renesas Technology Corp


部件名	RJK03P7DPA

下载	RJK03P7DPA 下载

文件大小	259.95 Kbytes

页	11 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	MOS2 30 V, 30 A, 5.3 m max. High Speed Power Switching

RJK03P7DPA Datasheet (PDF)

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RJK03P7DPA Datasheet PDF - Renesas Technology Corp


部件名	RJK03P7DPA

下载	RJK03P7DPA Click to download

文件大小	259.95 Kbytes

页	11 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	MOS2 30 V, 30 A, 5.3 m max. High Speed Power Switching

RJK03P7DPA 数据表 (HTML) - Renesas Technology Corp

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RJK03P7DPA Datasheet HTML 9Page - Renesas Technology Corp

RJK03P7DPA Datasheet HTML 10Page - Renesas Technology Corp

类似零件编号 - RJK03P7DPA

制造商	部件名	数据表	功能描述
Renesas Technology Corp	RJK03P0DPA	400Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P0DPA-00-J5A	400Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P6DPA	241Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P6DPA-00-J5A	241Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P9DPA	335Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

类似说明 - RJK03P7DPA

制造商	部件名	数据表	功能描述
NXP Semiconductors	PBSS303PZ	172Kb / 14P	30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02-20 November 2009
SeCoS Halbleitertechnol...	SSG9435BDY	616Kb / 4P	-5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET
Renesas Technology Corp	RJK6018DPK	85Kb / 7P	600 V - 30 A - MOS FET High Speed Power Switching
	RJP60F4DPM	85Kb / 7P	600 V - 30 A - IGBT High Speed Power Switching
	RJK1206JPD	96Kb / 7P	120 V - 30 A - N Channel Power MOS FET High Speed Power Switching
	RJK0631JPR	99Kb / 7P	60 V - 30 A - N Channel Power MOS FET High Speed Power Switching
	RJH60F4DPQ-A0	88Kb / 8P	600 V - 30 A - IGBT High Speed Power Switching
	RJK6018DPK	85Kb / 7P	600 V - 30 A - MOS FET High Speed Power Switching
	RJP60F4DPM	85Kb / 7P	600 V - 30 A - IGBT High Speed Power Switching
Nexperia B.V. All right...	PBSS303PZ	285Kb / 15P	30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 - 20 November 2009

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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