General

The Toshiba TLP155 consists of a GaAℓAs infrared light-emitting diodes and integrated high gain, high-speed photodetectors. The TLP155 is housed in the SO6 package. The photodetector has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µ. TLP155 is suitable for direct gate driving circuit for IGBTs or power MOSFETs.

Features

(1) Buffer logic type (Totem pole output)

(2) Package type: SO6

(3) Output peak current: ±0.6 A (max)

(4) Operating temperature: -40 to 100

(5) Threshold input current: 7.5 mA (max)

(6) Propagation delay time: tpHL/tpLH = 200 ns (max)

(7) Common-mode transient immunity: ±20 kV/µs (min)

(8) Propagation delay skew: ±85 ns(max)

(9) Isolation voltage: 3750 Vrms (min)

Applications

• Plasma Display Panels (PDPs)

• Transistor Inverters

• MOSFET Gate Drivers

• IGBT Gate Drivers