2SC3583 数据表(PDF) - Renesas Technology Corp

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2SC3583 数据表 (PDF) - Renesas Technology Corp

2SC3583 Datasheet PDF - Renesas Technology Corp


部件名	2SC3583

下载	2SC3583 下载

文件大小	321.32 Kbytes

页	10 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

2SC3583 Datasheet (PDF)

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2SC3583 Datasheet PDF - Renesas Technology Corp


部件名	2SC3583

下载	2SC3583 Click to download

文件大小	321.32 Kbytes

页	10 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

2SC3583 数据表 (HTML) - Renesas Technology Corp

2SC3583 Datasheet HTML 1Page - Renesas Technology Corp

2SC3583 Datasheet HTML 2Page - Renesas Technology Corp

2SC3583 Datasheet HTML 3Page - Renesas Technology Corp

2SC3583 Datasheet HTML 4Page - Renesas Technology Corp

2SC3583 Datasheet HTML 5Page - Renesas Technology Corp

2SC3583 Datasheet HTML 6Page - Renesas Technology Corp

2SC3583 Datasheet HTML 7Page - Renesas Technology Corp

2SC3583 Datasheet HTML 8Page - Renesas Technology Corp

2SC3583 Datasheet HTML 9Page - Renesas Technology Corp

2SC3583 Datasheet HTML 10Page - Renesas Technology Corp

2SC3583 产品详情

DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.

FEATURES
• NF 1.2 dB TYP. @f = 1.0 GHz
• Ga 13 dB TYP. @f = 1.0 GHz

类似零件编号 - 2SC3583

制造商	部件名	数据表	功能描述
NEC	2SC3583	103Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Guangdong Kexin Industr...	2SC3583	40Kb / 1P	NPN Silicon Epitaxial Transistor
California Eastern Labs	2SC3583	1Mb / 5P	MICROWAVE LOW NOISE AMPLIFIER
Inchange Semiconductor ...	2SC3583	300Kb / 6P	Low Noise and High Gain
Renesas Technology Corp	2SC3583	321Kb / 10P	SILICON TRANSISTOR

类似说明 - 2SC3583

制造商	部件名	数据表	功能描述
NEC	2SC2148	52Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC3356	102Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)
	2SC3582	99Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4536	60Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC5195	63Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC4094	323Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4095	329Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	UPA806T	209Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Leshan Radio Company	L2SC3357	309Kb / 2P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC2148	180Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR August 1996

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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