Description
The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.

Features
■ 22 dBm Output Power @ 18 GHz
■ High Associated Gain, 9 dB @ 18 GHz
■ High Power Added Efficiency, 23%
■ Broadband Operation, DC–18 GHz
■ 0.25 µm Ti/Pd/Au Gates
■ Passivated Surface