Description
The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Available in metal ceramic packages with a choice of two lead lengths. The components are also available in tape and reel and are ready for automatic insertion equipment.

Features
■ Low Noise Figure, 1.55 dB @ 4 GHz
■ High Associated Gain, 13 dB @ 4 GHz
■ High MAG, > 15 dB @ 4 GHz
■ 0.7 µm Ti/Pd/Au Gates
■ Passivated Surface
■ Low Cost Metal Ceramic Package
■ Available with Two Lead Lengths
■ Available in Tape and Reel Packaging