数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

DS1230W-150 数据表 (PDF) - Dallas Semiconductor

DS1230W-150 Datasheet PDF - Dallas Semiconductor
部件名 DS1230W-150
下载  DS1230W-150 下载

文件大小   214.24 Kbytes
  11 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 3.3V 256k Nonvolatile SRAM

DS1230W-150 Datasheet (PDF)

Go To PDF Page 下载 数据表
DS1230W-150 Datasheet PDF - Dallas Semiconductor

部件名 DS1230W-150
下载  DS1230W-150 Click to download

文件大小   214.24 Kbytes
  11 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 3.3V 256k Nonvolatile SRAM

DS1230W-150 数据表 (HTML) - Dallas Semiconductor

Back Button DS1230W-150 Datasheet HTML 1Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 2Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 3Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 4Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 5Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 6Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 7Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 8Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 9Page - Dallas Semiconductor DS1230W-150 Datasheet HTML 10Page - Dallas Semiconductor Next Button 

DS1230W-150 产品详情

DESCRIPTION
The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230W devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard.

FEATURES
■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times of 100ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Optional industrial temperature range of -40°C to +85°C, designated IND
■ JEDEC standard 28-pin DIP package
■ PowerCap Module (PCM) package
    - Directly surface-mountable module
    - Replaceable snap-on PowerCap provides lithium backup battery
    - Standardized pinout for all nonvolatile SRAM products
    - Detachment feature on PowerCap allows easy removal using a regular screwdriver




类似零件编号 - DS1230W-150

制造商部件名数据表功能描述
logo
Maxim Integrated Produc...
DS1230W-100++ MAXIM-DS1230W-100+ Datasheet
202Kb / 10P
   3.3V 256k Nonvolatile SRAM
19-5636; Rev 11/10
DS1230W-100IND++ MAXIM-DS1230W-100IND+ Datasheet
202Kb / 10P
   3.3V 256k Nonvolatile SRAM
19-5636; Rev 11/10
More results


类似说明 - DS1230W-150

制造商部件名数据表功能描述
logo
ARTSCHIP ELECTRONICS CO...
DS1230W ARTSCHIP-DS1230W Datasheet
527Kb / 11P
   3.3V 256K Nonvolatile SRAM
logo
Maxim Integrated Produc...
DS1230W MAXIM-DS1230W Datasheet
202Kb / 10P
   3.3V 256k Nonvolatile SRAM
19-5636; Rev 11/10
DS2030W MAXIM-DS2030W Datasheet
610Kb / 12P
   3.3V Single-Piece 256k Nonvolatile SRAM
Rev 0; 10/04
DS1230AB MAXIM-DS1230AB Datasheet
222Kb / 10P
   256k Nonvolatile SRAM
19-5635; Rev 11/10
DS1330W MAXIM-DS1330W Datasheet
224Kb / 10P
   3.3V 256k Nonvolatile SRAM with Battery Monitor
19-5590; Rev 10/10
logo
Dallas Semiconductor
DS1230Y DALLAS-DS1230Y Datasheet
213Kb / 12P
   256k Nonvolatile SRAM
logo
Maxim Integrated Produc...
DS1230Y-120 MAXIM-DS1230Y-120 Datasheet
222Kb / 10P
   256k Nonvolatile SRAM
Rev 11/10
logo
Dallas Semiconductor
DS1230Y DALLAS-DS1230Y_10 Datasheet
222Kb / 10P
   256k Nonvolatile SRAM
DS1330W DALLAS-DS1330W Datasheet
107Kb / 11P
   3.3V 256K Nonvolatile SRAM with Battery Monitor
DS1265W DALLAS-DS1265W_10 Datasheet
192Kb / 8P
   3.3V 8Mb Nonvolatile SRAM
More results




关于 Dallas Semiconductor


达拉斯半导体是一家美国公司,成立于1984年,是混合信号和数字半导体的供应商。
该公司总部位于德克萨斯州达拉斯,并以其创新产品和技术在实时时钟,温度传感器和其他集成电路领域而闻名。
2002年,达拉斯半导体被跨国半导体公司Maxim Integrated收购,并成为Maxim的子公司。
达拉斯半导体品牌不再使用,但其产品和技术仍然是Maxim投资组合的一部分。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




链接网址



隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com